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| (R) STS3DPFS30 TM STripFET P - CHANNEL 30V - 0.065 - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30V SCHOTTKY IF(AV) 3A R DS(on) 0.09 V RRM 30V ID 3A V F(MAX) 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage StripFET TM in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM (*) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C o Value 30 30 20 3 1.9 12 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol V RRM I F(RMS) I F(AV) I FSM I RRM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L =125 C =0.5 tp= 10 ms Sinusoidal tp=2 s F=1 kHz tp=100 s o Value 30 20 3 75 1 1 10000 Unit V A A A A A V/s (*) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed February 1999 1/5 STS3DPFS30 THERMAL DATA R thj-amb R thj-amb T stg Tj (*) Thermal Resistance Junction-ambient MOSFET (*) Thermal Resistance Junction-ambientSCHOTTKY Storage Temperature Range Maximum Junction Temperature (*) mounted on FR-4 board (steady state) 85 100 -65 to 150 150 o o C/W C/W o C o C MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage V GS = 20 V Current (V DS = 0) T c = 125 o C ON () Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On V GS = 10V Resistance Test Conditions I D = 250 A I D = 1.5 A 3 Min. 2 Typ. 3 0.065 Max. 4 0.09 Unit V A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Test Conditions V DS > I D(on) x R DS(on)max f = 1 MHz I D =1.5 A V GS = 0 Min. Typ. 5 1600 500 125 Max. Unit S pF pF pF V DS = 25 V Input Capacitance Output Capacitance Reverse Transfer Capacitance 2/5 STS3DPFS30 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 15 V I D = 1.5 A R G = 4.7 V GS = 10 V (Resistive Load, see fig. 3) V DD = 15 V ID = 3 A VGS = 10 V Min. Typ. 15 29 23 4.2 5.8 30 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V clamp = 24 V ID = 3 A R G = 4.7 V GS = 10 V (Inductive Load, see fig. 5) Min. Typ. 11 11 23 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Time Reverse Charge Reverse Current I SD = 3 A V GS = 0 34 45 2.6 Recovery I SD = 3 A di/dt = 100 A/s V DD = 15V T j = 150 o C Recovery (see test circuit, figure 5) Recovery Test Conditions Min. Typ. Max. 3 12 2 Unit A A V ns nC () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol IR () V F () Parameter Reversed Current o Test Conditions V R =30V V R =30V I F =3A I F =3A Min. Typ. 0.03 0.46 Max. 0.2 100 0.51 0.46 Unit mA mA V V Leakage T J= 25 C T J= 125 o C T J= 25 o C T J= 125 o C Forward Voltage drop 3/5 STS3DPFS30 SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 4/5 STS3DPFS30 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5 |
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